Electron energy level calculations for semiconductor nanostructures

Electron energy level calculations for semiconductor nanostructures

Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D ...

Electron soliton in semiconductor nanostructures

An electron wave packet formed in a semiconductor heterostructure containing a quantum well covered by a metal surface is considered. It is demonstrated that the potential of the charge induced by the electron wave packet on the conducting surface possesses a component of lateral confinement stabilizing its shape. The existence of electron solitons, i.e., running electron wave packets propagati...

Dynamics of electron entanglement in semiconductor nanostructures

Quantum entanglement, the most remarkable feature of quantum physics, is recognized as a resource for quantum information processing. The quest for quantum-computing devices has also produced great interest in entanglement formation in solid-state systems involving quantum effects. Indeed, the functionality of an increasing number of nanodevices is influenced by quantum correlations. In this wo...

Pronounced polarization-induced energy level shifts at boundaries of organic semiconductor nanostructures

Organic semiconductor devices rely on the movement of charge at and near interfaces, making an understanding of energy level alignment at these boundaries an essential element of optimizing materials for electronic and optoelectronic applications. Here we employ low temperature scanning tunneling microscopy and spectroscopy to investigate a model system: two-dimensional nanostructures of the pr...

Collective Electron Dynamics in Metallic and Semiconductor Nanostructures